? semiconductor components industries, llc, 2000 october, 2000 rev. 3 1 publication order number: mbr1035/d mbr1035, mbr1045 mbr1045 is a preferred device switchmode ? power rectifiers . . . using the schottky barrier principle with a platinum barrier metal. these stateoftheart devices have the following features: ? guardring for stress protection ? low forward voltage ? 150 c operating junction temperature ? epoxy meets ul94, vo at 1/8 mechanical characteristics: ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube ? marking: b1035, b1045 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage mbr1035 mbr1045 v rrm v rwm v r 35 45 v average rectified forward current (rated v r , t c = 135 c) i f(av) 10 a peak repetitive forward current, (rated v r , square wave, 20 khz, t c = 135 c) i frm 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 150 a peak repetitive reverse surge current (2.0 s, 1.0 khz) see figure 12. i rrm 1.0 a storage temperature range t stg 65 to +175 c operating junction temperature t j 65 to +150 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s device package shipping ordering information mbr1035 to220 http://onsemi.com to220ac case 221b plastic 50 units/rail 3 4 1 schottky barrier rectifiers 10 amperes 35 to 45 volts mbr1045 to220 50 units/rail preferred devices are recommended choices for future use and best overall value. 3 1, 4 marking diagram b10x5 b10x5 = device code x = 3 or 4
mbr1035, mbr1045 http://onsemi.com 2 thermal characteristics characteristic symbol value unit maximum thermal resistance, junction to case r q jc 2.0 c/w electrical characteristics maximum instantaneous forward voltage (note 1.) (i f = 10 amps, tc = 125 c) (i f = 20 amps, t c = 125 c) (i f = 20 amps, t c = 25 c) v f 0.57 0.72 0.84 volts maximum instantaneous reverse current (note 1.) (rated dc voltage, t c = 125 c) (rated dc voltage, t c = 25 c) i r 15 0.1 ma 1. pulse test: pulse width = 300 m s, duty cycle 2.0%. figure 1. maximum forward voltage 1.2 v f , instantaneous voltage (volts) 100 70 5.0 10 3.0 i f , instantaneous forward current (amps) 1.0 0.6 0.2 0.4 0.8 1.0 1.4 2.0 20 0.1 0.5 0.7 30 7.0 0.3 50 t j = 150 c figure 2. typical forward voltage 0.2 1.2 v f , instantaneous voltage (volts) 100 70 5.0 10 3.0 i f , instantaneous forward current (amps) 1.0 0.6 0.2 0.4 0.8 1.0 1.4 2.0 20 0.1 0.5 0.7 30 7.0 0.3 50 t j = 150 c 0.2 100 c 25 c 100 c 25 c
mbr1035, mbr1045 http://onsemi.com 3 5.0 15 0 v r , reverse voltage (volts) 10 1.0 0.1 0.01 0.001 number of cycles at 60 hz 10 1.0 200 100 50 30 20 3.0 10 , reverse current (ma) i r 20 30 25 100 2.0 10 0 70 i fsm , peak half-wave current (amps) 35 40 50 45 figure 3. maximum reverse current figure 4. maximum surge capability 7.0 5.0 30 20 70 50 t j = 150 c 125 c 100 c 75 c 25 c (capacitiveload) i pk i av 5 110 t c , case temperature ( c) 15 10 5.0 0 t a , ambient temperature ( c) 80 0 16 8.0 4.0 2.0 0 40 120 , average forward current (amps) i f(av) 130 140 20 20 160 6.0 150 160 figure 5. current derating, infinite heatsink figure 6. current derating, r ja = 16 c/w 60 120 100 140 2.0 0 i f(av) , average forward current (amps) 8.0 5.0 4.0 2.0 0 t a , ambient temperature ( c) 80 0 5.0 4.0 2.0 1.0 0 40 4.0 , average forward power dissipation (watts) p f(av) 6.0 10 8.0 10 20 160 3.0 i f(av) , average forward current (amps) 12 16 14 figure 7. forward power dissipation figure 8. current derating, free air 60 120 100 140 , average forward current (amps) i f(av) 14 10 12 3.0 1.0 9.0 7.0 6.0 dc t j = 150 c sine wave resistive load square wave (capacitiveload) i pk i av 5 20 10 rated voltage applied dc square wave 20 10 i pk i av (resistiveload) (capacitiveload) i pk i av 20, 10, 5 rated voltage applied dc square wave i pk i av (resistiveload) dc square wave i pk i av (resistiveload) (capacitiveload) i pk i av 20, 10, 5 rated voltage applied r ja = 60 c/w
mbr1035, mbr1045 http://onsemi.com 4 r(t), transient thermal resistance (normalized) 0.01 0.1 1.0 10 100 0.05 0.03 0.02 0.01 0.1 t, time (ms) 0.5 0.3 0.2 1.0 p pk p pk t p t 1 time duty cycle, d = t p /t 1 peak power, p pk , is peak of an equivalent square power pulse. d t jl = p pk ? r q jl [d + (1 - d) ? r(t 1 + t p ) + r(t p ) - r(t 1 )] where: d t jl = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t 1 + t p ) = normalized value of transient thermal resistance at time, t 1 + t p . 1000 figure 9. thermal response 0.07 0.7 high frequency operation since current flow in a schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minor- ity carrier injection and stored charge. satisfactory circuit analysis work may be performed by using a model consist- ing of an ideal diode in parallel with a variable capacitance. (see figure 10. ) rectification efficiency measurements show that opera- tion will be satisfactory up to several megahertz. for exam- ple, relative waveform rectification efficiency is approxi- mately 70 percent at 2.0 mhz, e.g., the ratio of dc power to rms power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. however, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode ca- pacitance, which lowers the dc output voltage. v r , reverse voltage (volts) 0.5 1500 1000 500 300 150 0.1 0.05 50 700 c, capacitance (pf) figure 10. capacitance 0.2 2.0 1.0 5.0 200 maximum typical 10 20
mbr1035, mbr1045 http://onsemi.com 5 ul rated epoxy copper aluminum wire anode schottky chip (see view a-a) cathode solder dipped copper leads 3 1 4 motorola builds quality and reliability into its schottky rectifiers. first is the chip, which has an interface metal between the barrier metal and aluminumcontact metal to eliminate any possible interaction between the two. the indicated guar- dring prevents dv/dt problems, so snubbers are not manda- tory. the guardring also operates like a zener to absorb overvoltage transients. second is the package. the schottky chip is bonded to the copper heat sink using a specially formulated solder. this gives the unit the capability of passing 10,000 operat- ing thermalfatigue cycles having a t j of 100 c. the epoxy molding compound is rated per ul 94, v0 @ 1/8 . wire bonds are 100% tested in assembly as they are made. third is the electrical testing, which includes 100% dv/dt at 1600 v/ s and reverse avalanche as part of device char- acterization. guardring platinum barrier metal oxide passivation aluminum contact metal schottky chip view a-a figure 11. schottky rectifier 2.0 m s 1.0 khz 12 v 100 v cc 12 vdc 2n2222 current amplitude adjust 0-10 amps 100 carbon 2n6277 1.0 carbon 1n5817 d.u.t. 2.0 k w +150 v, 10 madc 4.0 m f + figure 12. test circuit for dv/dt and reverse surge current
mbr1035, mbr1045 http://onsemi.com 6 package dimensions to220 plastic case 221b04 issue d b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.147 3.61 3.73 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f
mbr1035, mbr1045 http://onsemi.com 7 notes
mbr1035, mbr1045 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbr1035/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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